Product Description:

What is 3D V-Nand and How does it Differ from Existing Technology?
Samsung’s unique and innovative 3D V-Nand flash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of today’s conventional planar Nand architecture. 3D V-Nand is fabricated by stacking 32 cell layers vertically over one another rather than decreasing the cells dimensions and trying to fit itself onto a fixed horizontal space resulting in higher density and better performance utilising a smaller footprint.

Level Up to the 850 EVO Simply without Any Hassle -
In three simple steps the Samsung’s One-stop Install Navigator software easily allows you to migrate all the data and applications from the existing primary storage to the 850 EVO. The Samsung Magician software also allows you to optimise and manage your system best suited for your SSD.

Acquire an Integrated In-House Solution Consisting of Top-Quality Components -
Samsung is the only SSD brand to design and manufacture all its components in-house allowing complete optimised integration. The result – enhanced performance, lower power consumption with an up to 1 GB LPDDR2 DRAM cache memory and improved energy-efficiency with the MEX/MGX controller.

2 TB SSD for Extensive Workloads -
Introducing the world’s first 2 TB SSD for client PCs the SSD 850 EVO 2 TB. Powered by 3D V-Nand, you can store your progrems and data onto one drive, which is especially useful when editing and archiving a large number of Full HD multimedia files. The end result is fast data access times, progrem load times, and multitasking increasing overall computing speed for higher productivity. Enjoy better PC performance with a single spacious SSD.* *When compared to an environment using a combination of an HDD as a storage drive and an SSD as a boot drive.

Optimise -
Optimise daily computing with TurboWrite technology for unrivalled read/write speeds.
Achieve the ultimate read/write performance to maximise your everyday computing experience with Samsung’s TurboWrite technology. You not only obtain more than a 10% better user experience than 840 EVO* but up to 1.9x faster random write speeds for 120/250 GB models** as well. The 850EVO delivers the top of its class performance in sequential read (540 MB/s) and write (520 MB/s) speeds. Plus, you also gain optimised random performance in all QD for client PC usage scenario. *PCmark7 (250 GB ) : 6,700 (840 EVO) > 7,600 (850 EVO) **Random Write (QD32,120 GB) : 36,000 IOPS (840 EVO) > 88,000 IOPS (850 EVO).

Guaranteed Endurance and Reliability Bolstered by 3D V-Nand Technology -
The 850 EVO delivers guaranteed endurance and reliability by doubling the TBW* compared to the previous generation 840 EVO** backed by an industry leading 5 year warranty. The 850 EVO through minimised performance degradation allows sustained performance improvements of up to 30% over the 840 EVO proving to be one of the most dependable storage devices***. *TBW : Total Bytes Written **TBW : 43 (840 EVO) > 75 (850 EVO 120/250 GB),150 (850 EVO 500/1 TB) ***Sustained Performance (250 GB) : 3,300 IOPS (840 EVO) > 6,500 IOPS (850 EVO), Performance measured after 12 hours “Random Write” test.

Product Details:

• SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s and SATA 1.5 Gb/s interface
• Enhanced Performance: Sequential Read/Write speeds up to 550MB/s and 520MB/s respectively
• TBW-300
• Up to 5 years warranty
• 5 Years Limited Warranty or 150 TBW Limited Warranty